Semiconductor memory device

ABSTRACT

A semiconductor memory device includes a first wiring to a fifth wiring, a plurality of memory cells disposed between the wirings, and a first contact electrode to a third contact electrode. The first contact electrode is disposed between the first wiring and the fifth wiring, and is electrically connected to the first wiring and the fifth wiring. The second contact electrode is disposed between the first contact electrode and the fifth wiring, and is electrically connected to the first wiring and the fifth wiring. The third contact electrode is disposed between the second contact electrode and the fifth wiring, and is electrically connected to the first wiring and the fifth wiring. The second contact electrode has a width larger than a width of the first contact electrode and larger than a width of the third contact electrode.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is based upon and claims the benefit of Japanese PatentApplication No. 2020-049030, filed on Mar. 19, 2020, the entire contentsof which are incorporated herein by reference.

BACKGROUND Field

Embodiments described herein relate generally to a semiconductor memorydevice.

Description of the Related Art

There has been known a semiconductor memory device that includes a firstwiring, a second wiring intersecting with the first wiring, and a memorycell disposed on an intersection portion between the first wiring andthe second wiring.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic circuit diagram illustrating apart of aconfiguration of a semiconductor memory device according to a firstembodiment;

FIG. 2 is a schematic perspective view illustrating apart of theconfiguration of the semiconductor memory device;

FIG. 3 is a schematic plan view illustrating a part of the configurationof the semiconductor memory device;

FIG. 4 is a schematic enlarged view of a part indicated by R in FIG. 3;

FIG. 5 is a schematic cross-sectional view of a structure illustrated inFIG. 3 taken along a line A-A′ viewed in an arrow direction;

FIG. 6 is a schematic cross-sectional view of the structure illustratedin FIG. 3 taken along a line B-B′ viewed in an arrow direction;

FIGS. 7A and 7B are schematic cross-sectional views corresponding toparts of FIG. 5 and FIG. 6;

FIG. 8A is a schematic enlarged view corresponding to a part of FIG. 4;

FIG. 8B is a schematic enlarged view corresponding to a part of FIG. 4;

FIG. 8C is a schematic enlarged view corresponding to a part of FIG. 4;

FIG. 8D is a schematic enlarged view corresponding to a part of FIG. 4;

FIG. 9A is a schematic cross-sectional view of a structure illustratedin FIG. 8A taken along a line E0-E0′ viewed in an arrow direction;

FIG. 9B is a schematic cross-sectional view of the structure illustratedin FIG. 8A taken along a line F0-F0′ viewed in an arrow direction;

FIG. 9C is a schematic enlarged view corresponding to a part of FIG. 8A;

FIG. 10A is a schematic cross-sectional view of a structure illustratedin FIG. 8B taken along a line E1-E1′ viewed in an arrow direction;

FIG. 10B is a schematic cross-sectional view of the structureillustrated in FIG. 8B taken along a line F1-F1′ viewed in an arrowdirection;

FIG. 10C is a schematic enlarged view corresponding to a part of FIG.8B;

FIG. 11A is a schematic cross-sectional view of a structure illustratedin FIG. 8C taken along a line E2-E2′ viewed in an arrow direction;

FIG. 11B is a schematic cross-sectional view of the structureillustrated in FIG. 8C taken along a line F2-F2′ viewed in an arrowdirection;

FIG. 11C is a schematic enlarged view corresponding to a part of FIG.8C;

FIG. 12A is a schematic cross-sectional view of a structure illustratedin FIG. 8D taken along a line E3-E3′ viewed in an arrow direction;

FIG. 12B is a schematic cross-sectional view of the structureillustrated in FIG. 8D taken along a line F3-F3′ viewed in an arrowdirection;

FIG. 12C is a schematic enlarged view corresponding to a part of FIG.8D;

FIG. 13 is a schematic cross-sectional view illustrating a part of aconfiguration of a semiconductor memory device according to acomparative example;

FIG. 14 is a schematic cross-sectional view for describing thesemiconductor memory device according to the comparative example;

FIG. 15 is a schematic cross-sectional view for describing thesemiconductor memory device according to the comparative example;

FIG. 16 is a schematic cross-sectional view for describing thesemiconductor memory device according to the first embodiment;

FIG. 17 is a schematic cross-sectional view for describing thesemiconductor memory device;

FIG. 18 is a schematic cross-sectional view for describing thesemiconductor memory device;

FIG. 19 is a schematic cross-sectional view for describing thesemiconductor memory device;

FIG. 20 is a schematic cross-sectional view for describing asemiconductor memory device according to a second embodiment;

FIG. 21 is a schematic cross-sectional view for describing thesemiconductor memory device;

FIG. 22 is a schematic plan view for describing the semiconductor memorydevice;

FIG. 23 is a schematic cross-sectional view for describing thesemiconductor memory device;

FIG. 24 is a schematic plan view for describing the semiconductor memorydevice; and

FIG. 25 is a schematic cross-sectional view for describing asemiconductor memory device according to a modification.

FIG. 26 is a schematic plan view for describing the semiconductor memorydevice according to a modification.

DETAILED DESCRIPTION

A semiconductor memory device according to one embodiment includes: asubstrate; a first wiring disposed to be separated from the substrate ina first direction that intersects with a surface of the substrate, thefirst wiring extending in a second direction that intersects with thefirst direction; a second wiring disposed between the substrate and thefirst wiring; a third wiring disposed between the substrate and thesecond wiring, the third wiring extending in the second direction; afourth wiring disposed between the substrate and the third wiring; afifth wiring disposed between the substrate and the fourth wiring, thefifth wiring extending in the second direction; a first memory cellconnected to the first wiring and the second wiring; a second memorycell connected to the second wiring and the third wiring; a third memorycell connected to the third wiring and the fourth wiring; a fourthmemory cell connected to the fourth wiring and the fifth wiring; a firstcontact electrode disposed between the first wiring and the fifthwiring, the first contact electrode extending in the first direction andbeing electrically connected to the first wiring and the fifth wiring; asecond contact electrode disposed between the first contact electrodeand the fifth wiring, the second contact electrode extending in thefirst direction and being electrically connected to the first wiring andthe fifth wiring; and a third contact electrode disposed between thesecond contact electrode and the fifth wiring, the third contactelectrode extending in the first direction and being electricallyconnected to the first wiring and the fifth wiring, wherein the secondcontact electrode has a width in the second direction larger than awidth in the second direction of the first contact electrode and largerthan a width in the second direction of the third contact electrode.

A semiconductor memory device according to one embodiment includes: asubstrate; a first wiring disposed to be separated from the substrate ina first direction that intersects with a surface of the substrate, thefirst wiring extending in a second direction that intersects with thefirst direction; a second wiring disposed between the substrate and thefirst wiring; a third wiring disposed between the substrate and thesecond wiring, the third wiring extending in the second direction; afourth wiring disposed between the substrate and the third wiring; afifth wiring disposed between the substrate and the fourth wiring, thefifth wiring extending in the second direction; a first memory cellconnected to the first wiring and the second wiring; a second memorycell connected to the second wiring and the third wiring; a third memorycell connected to the third wiring and the fourth wiring; a fourthmemory cell connected to the fourth wiring and the fifth wiring; a sixthwiring disposed between the substrate and the fifth wiring; a firstcontact electrode disposed between the first wiring and the sixthwiring, the first contact electrode extending in the first direction andbeing electrically connected to the first wiring and the sixth wiring; asecond contact electrode disposed between the first contact electrodeand the sixth wiring, the second contact electrode extending in thefirst direction and being electrically connected to the first wiring andthe sixth wiring; and a third contact electrode disposed between thefifth wiring and the sixth wiring, the third contact electrode extendingin the first direction and being electrically connected to the fifthwiring and the sixth wiring, wherein the second contact electrode has awidth in the second direction larger than a width in the seconddirection of the first contact electrode.

Next, semiconductor memory devices according to embodiments aredescribed in detail with reference to the accompanying drawings. Thefollowing embodiments are only examples, and are not described for thepurpose of limiting the present invention.

In this specification, a predetermined direction parallel to a surfaceof a substrate is referred to as an X-direction, a direction parallel tothe surface of the substrate and perpendicular to the X-direction isreferred to as a Y-direction, and a direction perpendicular to thesurface of the substrate is referred to as a Z-direction.

In this specification, a direction along a predetermined plane may bereferred to as a first direction, a direction along this predeterminedplane and intersecting with the first direction may be referred to as asecond direction, and a direction intersecting with this predeterminedsurface may be referred to as a third direction. These first direction,second direction, and third direction may correspond to any of theX-direction, the Y-direction, and the Z-direction and need not tocorrespond to these directions.

Expressions such as “above” and “below” in this specification are basedon the substrate. For example, a direction away from the substrate alongthe Z-direction is referred to as above and a direction approaching thesubstrate along the Z-direction is referred to as below. A lower surfaceand a lower end of a certain configuration mean a surface and an endportion on the substrate side of this configuration. An upper surfaceand an upper end of a certain configuration mean a surface and an endportion on a side opposite to the substrate of this configuration. Asurface intersecting with the X-direction or the Y-direction is referredto as aside surface and the like.

Circuit configurations of the semiconductor memory devices according tothe embodiments will be described with reference to the drawings. Notethat the following drawings are schematic, and the configurations arepartially omitted in some cases for sake of convenience of thedescription.

First Embodiment

[Circuit Configuration]

First, with reference to FIG. 1 and FIG. 2, the circuit configuration ofthe semiconductor memory device according to the first embodiment willbe described. FIG. 1 is a schematic circuit diagram illustrating apartof the configuration of the semiconductor memory device. FIG. 2 is aschematic perspective view illustrating a part of the configuration ofthe semiconductor memory device.

The semiconductor memory device according to the embodiment includes amemory cell array MCA and a peripheral circuit PC controlling the memorycell array MCA.

For example, as illustrated in FIG. 2, the memory cell array MCAincludes memory mats MM0 to MM3 arranged in the Z-direction.

The memory mat MM0 includes a plurality of bit lines BL0 arranged in theX-direction and extending in the Y-direction, a plurality of word linesWL0 arranged in the Y-direction and extending in the X-direction, and aplurality of memory cells MC arranged in the X-direction and theY-direction corresponding to the bit lines BL0 and the word lines WL0.

The memory mat MM1 includes a plurality of word line WL0 arranged in theY-direction and extending in the X-direction, a plurality of bit linesBL1 arranged in the X-direction and extending in the Y-direction, and aplurality of memory cells MC arranged in the X-direction and theY-direction corresponding to the word lines WL0 and the bit lines BL1.

The memory mat MM2 includes the plurality of bit lines BL1 arranged inthe X-direction and extending in the Y-direction, a plurality of wordlines WL1 arranged in the Y-direction and extending in the X-direction,and a plurality of memory cells MC arranged in the X-direction and theY-direction corresponding to the bit lines BL1 and the word lines WL1.

The memory mat MM3 includes a plurality of word lines WL1 arranged inthe Y-direction and extending in the X-direction, a plurality of bitlines BL2 arranged in the X-direction and extending in the Y-direction,and a plurality of memory cells MC arranged in the X-direction and theY-direction corresponding to the word lines WL1 and the bit lines BL2.

For example, as illustrated in FIG. 1, the memory cell MC includes acathode E_(C), an anode E_(A), a variable resistance element VR, and anonlinear device NO. The cathode E_(C) is connected to any of the bitlines BL0, BL1, and BL2. The anode E_(A) is connected to any of the wordlines WL0 and WL1.

The bit lines BL0, BL2 are commonly connected to bit line contacts BLC0,and connected to the peripheral circuit PC via the bit line contactsBLC0. The bit lines BL1 are connected to bit line contacts BLC1, andconnected to the peripheral circuit PC via the bit line contacts BLC1.

The word lines WL0 are connected to word line contacts WLC0, andconnected to the peripheral circuit PC via the word line contacts WLC0.The word lines WL1 are connected to word line contacts WLC1, andconnected to the peripheral circuit PC via the word line contacts WLC1.

The peripheral circuit PC includes, for example, a step down circuit, aselection circuit, a sense amplifier circuit, and a sequencer thatcontrols them. The step down circuit steps down a power supply voltageand the like to output it to a voltage supply line. The selectioncircuit electrically conducts the bit lines BL0, BL1, and BL2 and theword lines WL0, WL1 corresponding to selected addresses withcorresponding voltage supply lines. The sense amplifier circuit outputsdata of 0 or 1 corresponding to the voltages or the currents of the bitlines BL0, BL1, and BL2.

[Structure]

Next, with reference to FIG. 3 to FIG. 12C, the structure of thesemiconductor memory device according to the embodiment will bedescribed.

FIG. 3 is a schematic plan view illustrating the configuration of thesemiconductor memory device according to the embodiment. FIG. 4 is aschematic enlarged view of a part indicated by R in FIG. 3. FIG. 5 is aschematic cross-sectional view of a structure illustrated in FIG. 3taken along a line A-A′ viewed in an arrow direction. FIG. 6 is aschematic cross-sectional view of the structure illustrated in FIG. 3taken along a line B-B′ viewed in an arrow direction.

As illustrated in FIG. 3, the semiconductor memory device according tothe embodiment includes a substrate 100. The substrate 100 is asemiconductor substrate of silicon (Si) and the like. The substrate 100includes a memory area MA and a peripheral area PA. As illustrated inFIG. 5 and FIG. 6, a circuit layer 200 is disposed on a surface of thesubstrate 100. The circuit layer 200 includes a plurality of transistorsTr and wirings constituting a part of the peripheral circuit PC. Memorycell arrays MCA are disposed above the circuit layer 200. As illustratedin FIG. 3, the memory cell arrays MCA are arranged in the X-directionand the Y-direction in a matrix. As illustrated in FIG. 4, a bit linehook-up region BLHU0 or a bit line hook-up region BLHU1 is disposedbetween the two memory cell arrays MCA mutually adjacent in theY-direction. A word line hook-up region WLHU0 or a word line hook-upregion WLHU1 is disposed between the two memory cell arrays MCA mutuallyadjacent in the X-direction.

[Configuration of Memory Mat MM0]

FIG. 7A is a schematic enlarged view corresponding to a part indicatedby C in FIG. 5. FIG. 7B is a schematic enlarged view corresponding to apart indicated by D in FIG. 6.

As illustrated in FIG. 7A and FIG. 7B, the memory mat MM0 includes aconductive layer 301, a barrier conductive layer 302, an electrode layer303, a chalcogen layer 304, an electrode layer 305, a barrier conductivelayer 306, a chalcogen layer 307, a barrier conductive layer 308, anelectrode layer 309, a barrier conductive layer 310, and a conductivelayer 311.

The conductive layer 301 is disposed on an upper surface of aninsulating layer 204 disposed to the circuit layer 200. The conductivelayer 301 extends in the Y-direction, and functions as a part of the bitline BL0. The conductive layer 301 contains tungsten (W) or the like.

The barrier conductive layer 302 is disposed on an upper surface of theconductive layer 301. The barrier conductive layer 302 extends in theY-direction, and functions as a part of the bit line BL0. The barrierconductive layer 302 contains tungsten nitride (WN) or the like.

The electrode layer 303 is disposed on an upper surface of the barrierconductive layer 302. The electrode layer 303 functions as the cathodeE_(C) of the memory cell MC. The electrode layer 303 contains carbonnitride (CN) or the like.

The chalcogen layer 304 is disposed on an upper surface of the electrodelayer 303. The chalcogen layer 304 functions as the nonlinear device NO.For example, when a voltage lower than a predetermined threshold isapplied to the chalcogen layer 304, the chalcogen layer 304 is a highresistance state. When the voltage applied to the chalcogen layer 304reaches the predetermined threshold, the chalcogen layer 304 becomes alow resistance state, and a current flowing through the chalcogen layer304 increases by multiple orders of magnitude. When the voltage appliedto the chalcogen layer 304 is below the predetermined voltage for acertain period, the chalcogen layer 304 becomes the high resistancestate again.

The chalcogen layer 304 contains, for example, at least one kind or moreof chalcogen. The chalcogen layer 304 may contain, for example, achalcogenide that is a compound containing chalcogen. The chalcogenlayer 304 may contain at least one kind of element selected from thegroup consisting of B, Al, Ga, In, C, Si, Ge, Sn, As, P, and Sb.

Note that, the chalcogen here is one other than oxygen (O) amongelements belonging to group 16 of the periodic table. The chalcogenincludes sulfur (S), selenium (Se), tellurium (Te), and the like.

The electrode layer 305 is disposed on an upper surface of the chalcogenlayer 304. The electrode layer 305 functions as an electrode connectedto the variable resistance element VR and the nonlinear device NO. Theelectrode layer 305 contains carbon (C) or the like.

The barrier conductive layer 306 is disposed on an upper surface of theelectrode layer 305. The barrier conductive layer 306 contains tungstennitride (WN) or the like.

The chalcogen layer 307 is disposed on an upper surface of the barrierconductive layer 306. The chalcogen layer 307 functions as the variableresistance element VR. The chalcogen layer 307 includes, for example, acrystalline region and a phase change region. The phase change region isdisposed on the cathode side with respect to the crystalline region. Thephase change region becomes an amorphous state (reset state: highresistance state) by a heating to a melting temperature or more and arapid cooling. The phase change region becomes a crystalline state(setting state: low resistance state) by a heating at a temperaturelower than the melting temperature and higher than a crystallizationtemperature and a slow cooling.

The chalcogen layer 307 contains, for example, at least one kind or moreof chalcogen. The chalcogen layer 307 may contain, for example, achalcogenide that is a compound containing chalcogen. The chalcogenlayer 307 may be GeSbTe, GeTe, SbTe, SiTe, or the like. The chalcogenlayer 307 may contain at least one kind of element selected fromgermanium (Ge), antimony (Sb), and tellurium (Te).

The barrier conductive layer 308 is disposed on an upper surface of thechalcogen layer 307. The barrier conductive layer 308 contains tungstennitride (WN) or the like.

The electrode layer 309 is disposed on an upper surface of the barrierconductive layer 308. The electrode layer 309 functions as the anodeE_(A) of the memory cell MC. The electrode layer 309 contains carbon (C)or the like.

The barrier conductive layer 310 is disposed on an upper surface of theelectrode layer 309. The barrier conductive layer 310 extends in theX-direction, and functions as a part of the word line WL0. The barrierconductive layer 310 contains tungsten nitride (WN) or the like.

The conductive layer 311 is disposed on an upper surface of the barrierconductive layer 310. The conductive layer 311 extends in theX-direction, and functions as a part of the word line WL0. Theconductive layer 311 contains tungsten (W) or the like.

[Configuration of Memory Mat MM1]

The memory mat MM1 includes a conductive layer 401, a barrier conductivelayer 402, an electrode layer 403, a chalcogen layer 404, an electrodelayer 405, a barrier conductive layer 406, a chalcogen layer 407, abarrier conductive layer 408, an electrode layer 409, a barrierconductive layer 410, and a conductive layer 411.

The conductive layer 401 is disposed on an upper surface of theconductive layer 311 in the memory mat MM0. The conductive layer 401extends in the X-direction, and functions as a part of the word lineWL0. The conductive layer 401 contains tungsten (W) or the like.

The barrier conductive layer 402 is disposed on an upper surface of theconductive layer 401. The barrier conductive layer 402 extends in theX-direction, and functions as a part of the word line WL0. The barrierconductive layer 402 contains tungsten nitride (WN) or the like.

The electrode layer 403 is disposed on an upper surface of the barrierconductive layer 402. The electrode layer 403 functions as the anodeE_(A) of the memory cell MC. The electrode layer 403 contains carbonnitride (CN) or the like.

The chalcogen layer 404 is disposed on an upper surface of the electrodelayer 403. The chalcogen layer 404 functions as the nonlinear device NOsimilarly to the chalcogen layer 304. The chalcogen layer 404 contains,for example, a material similar to that of the chalcogen layer 304.

The electrode layer 405 is disposed on an upper surface of the chalcogenlayer 404. The electrode layer 405 functions as an electrode connectedto the variable resistance element VR and the nonlinear device NO. Theelectrode layer 405 contains carbon (C) or the like.

The barrier conductive layer 406 is disposed on an upper surface of theelectrode layer 405. The barrier conductive layer 406 contains tungstennitride (WN) or the like.

The chalcogen layer 407 is disposed on an upper surface of the barrierconductive layer 406. The chalcogen layer 407 functions as the variableresistance element VR similarly to the chalcogen layer 307. Thechalcogen layer 407 contains, for example, a material similar to that ofthe chalcogen layer 307.

The barrier conductive layer 408 is disposed on an upper surface of thechalcogen layer 407. The barrier conductive layer 408 contains tungstennitride (WN) or the like.

The electrode layer 409 is disposed on an upper surface of the barrierconductive layer 408. The electrode layer 409 functions as the cathodeE_(C) of the memory cell MC. The electrode layer 409 contains carbon (C)or the like.

The barrier conductive layer 410 is disposed on an upper surface of theelectrode layer 409. The barrier conductive layer 410 extends in theY-direction, and functions as a part of the bit line BL1. The barrierconductive layer 410 contains tungsten nitride (WN) or the like.

The conductive layer 411 is disposed on an upper surface of the barrierconductive layer 410. The conductive layer 411 extends in theY-direction, and functions as a part of the bit line BL1. The conductivelayer 411 contains tungsten (W) or the like.

[Configuration of Memory Mat MM2]

The memory mat MM2 is configured similarly to the memory mat MM0. Notethat the conductive layer 301 in the memory mat MM2 is disposed on notthe upper surface of the insulating layer 204 disposed to the circuitlayer 200 but an upper surface of the conductive layer 411 in the memorymat MM1. The conductive layer 301 and the barrier conductive layer 302in the memory mat MM2 function as a part of not the bit line BL0 but thebit line BL1. The barrier conductive layer 310 and the conductive layer311 in the memory mat MM2 function as a part of not the word line WL0but the word line WL1.

[Configuration of Memory Mat MM3]

The memory mat MM3 is configured similarly to the memory mat MM1. Notethat the conductive layer 401 in the memory mat MM3 is disposed on notthe upper surface of the conductive layer 311 in the memory mat MM0 butan upper surface of the conductive layer 311 in the memory mat MM2. Theconductive layer 401 and the barrier conductive layer 402 in the memorymat MM3 function as a part of not the word line WL0 but the word lineWL1. The barrier conductive layer 410 and the conductive layer 411 inthe memory mat MM3 function as a part of not the bit line BL1 but thebit line BL2.

[Configuration of Word Line Hook-Up Region WLHU0]

As illustrated in FIG. 8A, the word line hook-up region WLHU0 includes apart of the plurality of word lines WL0 corresponding to the two memorycell arrays MCA mutually adjacent in the X-direction. The plurality ofword lines WL0 extend in the X-direction and are arranged in theY-direction.

As illustrated in FIG. 8A, the word line hook-up region WLHU0 includes aplurality of word line contacts WLC0 arranged in the X-direction and theY-direction. As illustrated in FIG. 5, the plurality of word lines WL0are connected to transistors Tr in the circuit layer 200 via theplurality of word line contacts WLC0. In the example of FIG. 8A,positions in the X-direction of the plurality of word line contacts WLC0connected to a 3n_(A)-th (n_(A) is a natural number) word line WL0counting from one side in the Y-direction, positions in the X-directionof the plurality of word line contacts WLC0 connected to a 3n_(A)+1-thword line WL0, and positions in the X-direction of the plurality of wordline contacts WLC0 connected to a 3n_(A)+2-th word line WL0 are mutuallydifferent.

As illustrated in FIG. 9A, the word line contact WLC0 includes a contactelectrode V00 disposed to the circuit layer 200 and a contact electrodeV10 disposed at a height position corresponding to the memory mat MM0.

The contact electrode V00 includes, for example, a stacked film of abarrier conductive layer of titanium nitride or the like and a metallayer of tungsten or the like. The contact electrode V00 extends in theZ-direction, and is connected to the peripheral circuit PC via a contactelectrode SV (FIG. 5) disposed downward. A height position of an uppersurface of the contact electrode V00 matches a height position of alower surface of the conductive layer 301 in the memory mat MM0.

The contact electrode V10 includes, for example, a stacked film of abarrier conductive layer of titanium nitride or the like and a metallayer of tungsten or the like. The contact electrode V10 extends in theZ-direction. A lower end of the contact electrode V10 is connected tothe upper surface of the contact electrode V00. An upper end of thecontact electrode V10 is connected to a lower surface of the barrierconductive layer 310 in the memory mat MM0. A height position of anupper surface of the contact electrode V10 matches a height position ofthe lower surface of the barrier conductive layer 310 in the memory matMM0.

In FIG. 9C, a width in the Y-direction of the word line WL0 is definedas W_(WL0Y), and a distance between the two word lines WL0 mutuallyadjacent in the Y-direction is defined as D_(WL0Y). In the example ofFIG. 9C, a width W_(V00y) in the Y-direction of the contact electrodeV00 is larger than a sum of W_(WL0Y) and 2D_(WL0Y). A width W_(V10Y) inthe Y-direction of the contact electrode V10 is larger than W_(WL0Y) andsmaller than the sum of W_(WL0Y) and 2D_(WL0Y). For example, in theexample of FIG. 9B, a width in the Y-direction of an upper end portionV10 c of the contact electrode V10 matches the width (W_(WL0Y) in FIG.9C) in the Y-direction of the word line WL0. Note that the width in theY-direction of the upper end portion V10 c of the contact electrode V10is smaller than the width (W_(WL0Y) in FIG. 9C) in the Y-direction ofthe word line WL0 in some cases. In the example of FIG. 9C, a widthW_(V00X) in the X-direction of the contact electrode V00 is about thesame as the width W_(V00Y) in the Y-direction. A width W_(V10X) in theX-direction of the contact electrode V10 is larger than the widthW_(V10Y) in the Y-direction of the contact electrode V10 and smallerthan the width W_(V00X) in the X-direction of the contact electrode V00.

[Configuration of Word Line Hook-Up Region WLHU1]

As illustrated in FIG. 8B, the word line hook-up region WLHU1 includes apart of the plurality of word lines WL1 corresponding to the two memorycell arrays MCA mutually adjacent in the X-direction. The plurality ofword lines WL1 extend in the X-direction and are arranged in theY-direction.

As illustrated in FIG. 8B, the word line hook-up region WLHU1 includes aplurality of word line contacts WLC1 arranged in the X-direction and theY-direction. As illustrated in FIG. 5, the plurality of word lines WL1are connected to the transistors Tr in the circuit layer 200 via theplurality of word line contacts WLC1. In the example of FIG. 8B,positions in the X-direction of the plurality of word line contacts WLC1connected to a 3n_(B)-th (n_(B) is a natural number) word line WL1counting from one side in the Y-direction, positions in the X-directionof the plurality of word line contacts WLC1 connected to a 3n_(B)+1-thword line WL1, and positions in the X-direction of the plurality of wordline contacts WLC1 connected to a 3n_(B)+2-th word line WL1 are mutuallydifferent.

As illustrated in FIG. 10A, the word line contact WLC1 includes acontact electrode V01 disposed to the circuit layer 200, a contactelectrode V11 disposed at a height position corresponding to the memorymat MM0, a contact electrode V21 disposed at a height positioncorresponding to the memory mat MM1, and a contact electrode V31disposed at a height position corresponding to the memory mat MM2.

The contact electrode V01 includes, for example, a stacked film of abarrier conductive layer of titanium nitride or the like and a metallayer of tungsten or the like. The contact electrode V01 extends in theZ-direction, and is connected to the peripheral circuit PC via thecontact electrode SV (FIG. 5) disposed downward. A height position of anupper surface of the contact electrode V01 matches the height positionof the lower surface of the conductive layer 301 in the memory mat MM0.

The contact electrode V11 includes, for example, a stacked film of abarrier conductive layer of titanium nitride or the like and a metallayer of tungsten or the like. The contact electrode V11 extends in theZ-direction. A lower end of the contact electrode V11 is connected tothe upper surface of the contact electrode V01. A height position of anupper surface of the contact electrode V11 matches the height positionof the lower surface of the barrier conductive layer 310 in the memorymat MM0.

The contact electrode V21 includes, for example, a stacked film of abarrier conductive layer of titanium nitride or the like and a metallayer of tungsten or the like. The contact electrode V21 extends in theZ-direction. A lower end of the contact electrode V21 is connected tothe upper surface of the contact electrode V11. A height position of anupper surface of the contact electrode V21 matches a height position ofa lower surface of the barrier conductive layer 410 in the memory matMM1.

The contact electrode V31 includes, for example, a stacked film of abarrier conductive layer of titanium nitride or the like and a metallayer of tungsten or the like. The contact electrode V31 extends in theZ-direction. A lower end of the contact electrode V31 is connected tothe upper surface of the contact electrode V21. An upper end of thecontact electrode V31 is connected to a lower surface of the barrierconductive layer 310 in the memory mat MM2. A height position of anupper surface of the contact electrode V31 matches a height position ofthe lower surface of the barrier conductive layer 310 in the memory matMM2.

In FIG. 10C, a width in the Y-direction of the word line WL1 is definedas W_(WL1Y), and a distance between the two word lines WL1 mutuallyadjacent in the Y-direction is defined as D_(WL1Y). In the example ofFIG. 10C, a width W_(V21Y) in the Y-direction of the contact electrodesV01, V11, and V21 is larger than a sum of W_(WL1Y) and 2D_(WL1Y). Awidth W_(V31Y) in the Y-direction of the contact electrode V31 is largerthan W_(WL1Y) and smaller than the sum of W_(WL1Y) and 2D_(WL1Y). Forexample, in the example of FIG. 10B, a width in the Y-direction of anupper end portion V31 c of the contact electrode V31 matches the width(W_(WL1Y) in FIG. 10C) in the Y-direction of the word line WL1. Notethat the width in the Y-direction of the upper end portion V31 c of thecontact electrode V31 is smaller than the width (W_(WL1Y) in FIG. 10C)in the Y-direction of the word line WL1 in some cases. In the example ofFIG. 10C, a width W_(V21X) in the X-direction of the contact electrodesV01, V11, and V21 is about the same as the width W_(V21Y) in theY-direction. A width W_(V31X) in the X-direction of the contactelectrode V31 is larger than the width W_(V31Y) in the Y-direction ofthe contact electrode V31 and smaller than the width W_(V21X) in theX-direction of the contact electrodes V01, V11, and V21.

[Configuration of Bit Line Hook-Up Region BLHU0]

As illustrated in FIG. 8C, the bit line hook-up region BLHU0 includes apart of a plurality of bit lines BL0, BL2 corresponding to the twomemory cell arrays MCA mutually adjacent in the Y-direction. Theplurality of bit lines BL0, BL2 extend in the Y-direction and arearranged in the X-direction.

As illustrated in FIG. 8C, the bit line hook-up region BLHU0 includes aplurality of bit line contacts BLC0 arranged in the X-direction and theY-direction. As illustrated in FIG. 6, the plurality of bit lines BL0,BL2 are connected to the transistors Tr in the circuit layer 200 via theplurality of bit line contacts BLC0. In the example of FIG. 8C,positions in the Y-direction of the plurality of bit line contacts BLC0connected to a 3n_(C)-th (n_(C) is a natural number) bit lines BL0, BL2counting from one side in the X-direction, positions in the Y-directionof the plurality of bit line contacts BLC0 connected to a 3n_(C)+1-thbit lines BL0, BL2, and positions in the Y-direction of the plurality ofbit line contacts BLC0 connected to a 3n_(C)+2-th bit lines BL0, BL2 aremutually different.

As illustrated in FIG. 11A, the bit line contact BLC0 includes a contactelectrode V02 disposed to the circuit layer 200, a contact electrode V12disposed at the height position corresponding to the memory mat MM0, acontact electrode V22 disposed at the height position corresponding tothe memory mat MM1, a contact electrode V32 disposed at the heightposition corresponding to the memory mat MM2, and a contact electrodeV42 disposed at a height position corresponding to the memory mat MM3.

The contact electrode V02 includes, for example, a stacked film of abarrier conductive layer of titanium nitride or the like and a metallayer of tungsten or the like. The contact electrode V02 extends in theZ-direction, and is connected to the peripheral circuit PC via thecontact electrode SV (FIG. 6) disposed downward. An upper end of thecontact electrode V02 is connected the lower surface of the conductivelayer 301 in the memory mat MM0. A height position of an upper surfaceof the contact electrode V02 matches the height position of the lowersurface of the conductive layer 301 in the memory mat MM0.

The contact electrode V12 includes, for example, a stacked film of abarrier conductive layer of titanium nitride or the like and a metallayer of tungsten or the like. The contact electrode V12 extends in theZ-direction. A lower end of the contact electrode V12 is connected tothe upper surface of the barrier conductive layer 302. A height positionof an upper surface of the contact electrode V12 matches the heightposition of the lower surface of the barrier conductive layer 310 in thememory mat MM0.

The contact electrode V22 includes, for example, a stacked film of abarrier conductive layer of titanium nitride or the like and a metallayer of tungsten or the like. The contact electrode V22 extends in theZ-direction. A lower end of the contact electrode V22 is connected tothe upper surface of the contact electrode V12. A height position of anupper surface of the contact electrode V22 matches the height positionof the lower surface of the barrier conductive layer 410 in the memorymat MM1.

The contact electrode V32 includes, for example, a stacked film of abarrier conductive layer of titanium nitride or the like and a metallayer of tungsten or the like. The contact electrode V32 extends in theZ-direction. A lower end of the contact electrode V32 is connected tothe upper surface of the contact electrode V22. A height position of anupper surface of the contact electrode V32 matches the height positionof the lower surface of the barrier conductive layer 310 in the memorymat MM2.

The contact electrode V42 includes, for example, a stacked film of abarrier conductive layer of titanium nitride or the like and a metallayer of tungsten or the like. The contact electrode V42 extends in theZ-direction. A lower end of the contact electrode V42 is connected tothe upper surface of the contact electrode V32. An upper end of thecontact electrode V42 is connected to a lower surface of the barrierconductive layer 410 in the memory mat MM3. A height position of anupper surface of the contact electrode V42 matches a height position ofthe lower surface of the barrier conductive layer 410 in the memory matMM3.

In FIG. 11C, widths in the X-direction of the bit lines BL0, BL2 aredefined as W_(BL2X), and distances between the two bit lines BL0, BL2mutually adjacent in the X-direction are defined as D_(BL2X). In theexample of FIG. 11C, a width W_(V32X) in the X-direction of the contactelectrodes V22, V32 is larger than a sum of W_(BL2X) and 2D_(BL2X). AWidth W_(V42X) in the X-direction of the contact electrodes V12, V42 islarger than W_(BL2X) and smaller than the sum of W_(BL2X) and 2D_(BL2X).For example, in the example of FIG. 11B, a width in the X-direction ofan upper end portion V42 c of the contact electrode V42 matches thewidth (W_(BL2X) in FIG. 11C) in the X-direction of the bit lines BL0,BL2. Note that the width in the X-direction of the upper end portion V42c of the contact electrode V42 is smaller than the width (W_(BL2X) inFIG. 11C) in the X-direction of the bit lines BL0, BL2 in some cases. Inthe example of FIG. 11C, a width W_(V32Y) in the Y-direction of thecontact electrodes V22, V32 is about the same as the width W_(V32X) inthe X-direction. A Width W_(V42Y) in the Y-direction of the contactelectrodes V12, V42 is larger than the width W_(V42X) in the X-directionof the contact electrode V42 and smaller than the width W_(V32Y) in theY-direction of the contact electrodes V22, V32.

[Configuration of Bit Line Hook-Up Region BLHU1]

As illustrated in FIG. 8D, the bit line hook-up region BLHU1 includes apart of the plurality of bit lines BL1 corresponding to the two memorycell arrays MCA mutually adjacent in the Y-direction. The plurality ofbit lines BL1 extend in the Y-direction and are arranged in theX-direction.

As illustrated in FIG. 8D, the bit line hook-up region BLHU1 includes aplurality of bit line contacts BLC1 arranged in the X-direction and theY-direction. As illustrated in FIG. 6, the plurality of bit lines BL1are connected to the transistors Tr in the circuit layer 200 via theplurality of bit line contacts BLC1. In the example of FIG. 8D,positions in the Y-direction of the plurality of bit line contacts BLC1connected to a 3n_(D)-th (n_(D) is a natural number) bit line BL1counting from one side in the X-direction, positions in the Y-directionof the plurality of bit line contacts BLC1 connected to a 3n_(D)+1-thbit line BL1, and positions in the Y-direction of the plurality of bitline contacts BLC1 connected to a 3n_(D)+2-th bit line BL1 are mutuallydifferent.

As illustrated in FIG. 12A, the bit line contact BLC1 includes a contactelectrode V03 disposed to the circuit layer 200, a contact electrode V13disposed at the height position corresponding to the memory mat MM0, anda contact electrode V23 disposed at the height position corresponding tothe memory mat MM1.

The contact electrode V03 includes, for example, a stacked film of abarrier conductive layer of titanium nitride or the like and a metallayer of tungsten or the like. The contact electrode V03 extends in theZ-direction, and is connected to the peripheral circuit PC via thecontact electrode SV (FIG. 6) disposed downward. A height position of anupper surface of the contact electrode V03 matches the height positionof the lower surface of the conductive layer 301 in the memory mat MM0.

The contact electrode V13 includes, for example, a stacked film of abarrier conductive layer of titanium nitride or the like and a metallayer of tungsten or the like. The contact electrode V13 extends in theZ-direction. A lower end of the contact electrode V13 is connected tothe upper surface of the contact electrode V03. A height position of anupper surface of the contact electrode V13 matches the height positionof the lower surface of the barrier conductive layer 310 in the memorymat MM0.

The contact electrode V23 includes, for example, a stacked film of abarrier conductive layer of titanium nitride or the like and a metallayer of tungsten or the like. The contact electrode V23 extends in theZ-direction. A lower end of the contact electrode V23 is connected tothe upper surface of the contact electrode V13. An upper end of thecontact electrode V23 is connected the lower surface of the barrierconductive layer 410 in the memory mat MM1. A height position of anupper surface of the contact electrode V23 matches the height positionof the lower surface of the barrier conductive layer 410 in the memorymat MM1.

In FIG. 12C, a width in the X-direction of the bit line BL1 is definedas W_(BL1X), and a distance between the two bit lines BL1 mutuallyadjacent in the X-direction is defined as D_(BL1X). In the example ofFIG. 12C, a width W_(V13X) in the X-direction of the contact electrodesV03, V13 is larger than a sum of W_(BL1X) and 2D_(BL1X). A widthW_(V23X) in the X-direction of the contact electrode V23 is larger thanW_(BL1X) and smaller than the sum of W_(BL1X) and 2D_(BL1X). Forexample, in the example of FIG. 12B, a width in the X-direction of anupper end portion V23 c of the contact electrode V23 matches the width(W_(BL1X) in FIG. 12C) in the X-direction of the bit line BL1. Note thatthe width in the X-direction of the upper end portion V23 c of thecontact electrode V23 is smaller than the width (W_(BL1X) in FIG. 12C)in the X-direction of the bit line BL1 in some cases. In the example ofFIG. 12C, a width W_(V13Y) in the Y-direction of the contact electrodesV03, V13 is about the same as the width W_(V13X) in the X-direction. Awidth W_(V23Y) in the Y-direction of the contact electrode V23 is largerthan the width W_(V23X) in the X-direction of the contact electrode V23and smaller than the width W_(V13Y) in the Y-direction of the contactelectrodes V03, V13.

[Effects]

For example, as described with reference to FIG. 2, the semiconductormemory device according to the embodiment includes a plurality of memorymats MM0 to MM3 arranged in the Z-direction. The plurality of memorymats MM0 to MM3 include a plurality of bit lines BL0, BL1, and BL2,which extend in the Y-direction and are arranged in the X-direction, anda plurality of word lines WL0, WL1 that extend in the X-direction andare arranged in the Y-direction.

In the semiconductor memory device having such a configuration, it isconsidered to connect between the bit line BL0 and the bit line BL2 forreducing the circuit area. Therefore, for example, as exemplified inFIG. 13, it is also considered to connect between the bit line BL0 andthe bit line BL2 by a single contact electrode V50 extending in theZ-direction.

Here, when forming such a contact electrode V50, for example, asexemplified in FIG. 14, it is necessary to form contact holes CH0 thatpenetrate an insulating layer from the height position corresponding tothe memory mat MM0 to the height position corresponding to the memorymat MM3. Here, from the aspect of miniaturization, the widths and thedistances in the X-direction of the bit lines BL0, BL2 are preferablysmall. In this case, an aspect ratio of the contact hole CH0 possiblyincreases. When the aspect ratio of the contact hole CH0 is large, forexample, as exemplified in FIG. 15, the contact hole CH0 fails to reachthe upper surface of the bit line BL0 in some cases. In addition, amargin for position shift in the X-direction is decreased, and theconnection between the bit lines BL0 and BL2 fails to be appropriatelymade in some cases.

Therefore, in this embodiment, the connection between the bit lines BL0and BL2 is made by not the single contact electrode but a plurality ofcontact electrodes V12, V22, V32, and V42, for example, as describedwith reference to FIG. 11A and the like. This configuration eliminates aneed for forming the contact hole CH0 with large aspect ratio in formingthe bit line contact BLC0.

In this embodiment, for example, as described with reference to FIG.11C, the width in the X-direction of the contact electrodes V22, V32 isformed to be larger than the width in the X-direction of the contactelectrodes V12, V42. This configuration ensures the increased margin forthe position shift in the X-direction, thus appropriately connectingbetween the bit lines BL0 and BL2. This configuration ensures theincreased contacted area between the contact electrodes V22, V32, thusforming the bit line contact BLC0 with low resistance.

In this embodiment, for example, as described with reference to FIG.11C, the width in the X-direction of the contact electrode V42 is formedto be larger than the width in the X-direction of the bit line BL2. Thisconfiguration ensures the decreased aspect ratio of a contact hole CH1corresponding to the contact electrode V42.

When forming such a contact electrode V42, for example, as illustratedin FIG. 16, the contact hole CH1 having the width in the X-directionlarger than that of the bit line BL2 is formed. As illustrated in FIG.17, the contact electrode V42 is formed in the contact hole CH1. Asillustrated in FIG. 18, a barrier conductive layer 410′ and a conductivelayer 411′ are formed on the upper surface of this structure. Asillustrated in FIG. 19, the barrier conductive layer 410′ and theconductive layer 411′ are processed to form the bit line BL2. At thistime, a part of the proximity of an upper end of a contact electrode V42is removed.

Second Embodiment

Next, with reference to FIG. 20 to FIG. 24, a semiconductor memorydevice according to the second embodiment will be described. FIG. 20 andFIG. 21 are schematic cross-sectional views of the semiconductor memorydevice according to the embodiment, and illustrate the cross-sectionalsurfaces of the portions corresponding to FIG. 5 and FIG. 6,respectively. FIG. 20 and FIG. 21 are schematic views and not thecross-sectional views illustrating specific configurations of respectivecomponents. For example, wirings D11, D12 illustrated in FIG. 21 extendin the Y-direction and are connected to a plurality of contactelectrodes SV arranged in the Y-direction. However, as described withreference to FIG. 22, a connecting portion of the wiring D11 to thecontact electrode SV and a portion extending in the Y-direction do notappear on the same YZ cross section in some cases.

As illustrated in FIG. 20 and FIG. 21, the semiconductor memory deviceaccording to the embodiment is basically configured similarly to thesemiconductor memory device according to the first embodiment. However,the semiconductor memory device according to the embodiment includes aword line hook-up region WLHU1′ and bit line hook-up regions BLHU0′,BLHU1′ instead of the word line hook-up region WLHU1 and the bit linehook-up regions BLHU0, BLHU1.

The word line hook-up region WLHU1′ is basically configured similarly tothe word line hook-up region WLHU1 as illustrated in, for example, FIG.20. Note that the word line hook-up region WLHU1′ includes a word linecontact WLC1′ instead of the word line contact WLC1. The word linecontact WLC1′ is basically configured similarly to the word line contactWLC1. Note that the word line contact WLC1′ includes a contact electrodeV31′ instead of the contact electrodes V11, V21, and V31.

The contact electrode V31′ includes, for example, a stacked film of abarrier conductive layer of titanium nitride or the like and a metallayer of tungsten or the like. The contact electrode V31′ extends in theZ-direction. A lower end of the contact electrode V31′ is connected tothe upper surface of the contact electrode V01. An upper end of thecontact electrode V31′ is connected to the lower surface of the barrierconductive layer 310 in the memory mat MM2. A height position of anupper surface of the contact electrode V31′ matches the height positionof the lower surface of the barrier conductive layer 310 in the memorymat MM2.

The bit line hook-up region BLHU1′ is basically configured similarly tothe bit line hook-up region BLHU1 as illustrated in, for example, FIG.21. Note that the bit line hook-up region BLHU1′ includes a bit linecontact BLC1′ instead of the bit line contact BLC1. The bit line contactBLC1′ is basically configured similarly to the bit line contact BLC1.Note that the bit line contact BLC1′ includes a contact electrode V23′instead of the contact electrodes V13, V23.

The contact electrode V23′ includes, for example, a stacked film of abarrier conductive layer of titanium nitride or the like and a metallayer of tungsten or the like. The contact electrode V23′ extends in theZ-direction. A lower end of the contact electrode V23′ is connected tothe upper surface of the contact electrode V03. An upper end of thecontact electrode V23′ is connected to the lower surface of the barrierconductive layer 410 in the memory mat MM1. A height position of anupper surface of the contact electrode V23′ matches the height positionof the lower surface of the barrier conductive layer 410 in the memorymat MM1.

Next, with reference to FIG. 21 to FIG. 23, a configuration of the bitline hook-up region BLHU0′ according to the embodiment will bedescribed. FIG. 22 is a schematic plan view illustrating a part of theconfiguration of the bit line hook-up region BLHU0′. Note that FIG. 22omits the bit line BL2. FIG. 23 is a schematic cross-sectional view ofthe structure illustrated in FIG. 22 taken along a line G0-G0′ viewed inan arrow direction. Note that FIG. 23 does not omit the bit line BL2.

As illustrated in FIG. 6, in the first embodiment, the two memory cellarrays MCA mutually adjacent in the Y-direction include the bit linesBL0, BL2 in common.

Here, as illustrated in FIG. 21, also in this embodiment, the two memorycell arrays MCA mutually adjacent in the Y-direction include the bitline BL2 in common. Meanwhile, in this embodiment, the two bit lines BL0corresponding to the two memory cell arrays MCA mutually adjacent in theY-direction are physically cut in the bit line hook-up region BLHU0′.The two bit lines BL0 are mutually electrically conducted via bit linecontacts BLC00 and the wirings D11, D12 in the circuit layer 200. Thetwo bit lines BL0 are electrically conducted with the bit line BL2 viathe bit line contacts BLC00, the wiring D11 in the circuit layer 200,and a bit line contact BLC02.

As illustrated in FIG. 22, the bit line hook-up region BLHU0′ includes aplurality of bit line contacts BLC02 arranged in the X-direction and theY-direction. As illustrated in FIG. 22, the bit line hook-up regionBLHU0′ includes a part of a plurality of bit lines BL0 corresponding tothe two memory cell arrays MCA mutually adjacent in the Y-direction. Theplurality of bit lines BL0 extend in the Y-direction and are arranged inthe X-direction. In the plurality of bit lines BL0, portions disposed atpositions corresponding to the bit line contacts BLC02 are physicallycut as described above. At proximities of cut portions of the bit linesBL0, the bit line contacts BLC00 connected to the bit lines BL0, and thewirings D11, D12 connected to the bit line contacts BLC00 are disposed.

As illustrated in FIG. 23, the bit line contact BLC00 includes a contactelectrode V02. The bit line contact BLC02 includes a contact electrodeV32′ and a contact electrode V42.

The contact electrode V32′ includes, for example, a stacked film of abarrier conductive layer of titanium nitride or the like and a metallayer of tungsten or the like. The contact electrode V32′ extends in theZ-direction. A lower end of the contact electrode V32′ is connected toan upper surface of the contact electrode SV. An upper end of thecontact electrode V32′ is connected to a lower surface of the contactelectrode V42. A height position of an upper surface of the contactelectrode V32′ matches the height position of the lower surface of thebarrier conductive layer 310 in the memory mat MM2.

In FIG. 24, widths in the X-direction of the bit lines BL0, BL2 aredefined as W_(BL0X), and distances between the two bit lines BL0, BL2mutually adjacent in the X-direction are defined as D_(BL0X). In theexample of FIG. 24, a width W_(V32X)′ in the X-direction of the contactelectrode V32′ is larger than a sum of 2W_(BL0X) and D_(BL0X). A widthW_(V42X) in the X-direction of the contact electrode V42 is larger thanW_(BL0X) and smaller than a sum of W_(BL0X) and 2D_(BL0X). In theexample of FIG. 24, a width W_(V32Y)′ in the Y-direction of the contactelectrode V32′ is about the same as the width W_(V32X)′ in theX-direction. The width W_(V42Y) in the Y-direction of the contactelectrode V42 is smaller than the width W_(V32Y)′ in the Y-direction ofthe contact electrode V32′.

As illustrated in FIG. 22, the wiring D11 includes two parts D111 thatextend in the X-direction and are arranged in the Y-direction, a partD112 that extends in the X-direction and is disposed between the twoparts D111, and a part D113 that extends in the Y-direction and isconnected to the two parts D111 and the part D112. As illustrated inFIG. 23, the parts D111 are connected to lower ends of the respectivecontact electrodes V02 in the bit line contact BLC00 via the contactelectrodes SV. The part D112 is connected to the lower end of thecontact electrode V32′ in the bit line contact BLC02 via the contactelectrode SV.

As illustrated in FIG. 22, the wiring D12 includes two parts D121 thatextend in the X-direction and are arranged in the Y-direction, and apart D122 that extends in the Y-direction and is connected to the twoparts D121. As illustrated in FIG. 23, the parts D121 are connected tolower ends of the respective contact electrodes V02 in the two bit linecontacts BLC00 via the contact electrodes SV.

[Effect]

In this embodiment, the bit line contact BL02 connected to the bit lineBL2 includes the contact electrode V32′, and the width W_(V32X)′ (FIG.24) in the X-direction of the contact electrode V32′ is larger than thewidth W_(BL0X) (FIG. 24) in the X-direction of the bit lines BL0, BL2.Accordingly, it is not necessary to form the contact hole CH0 with largeaspect ratio. In addition, the bit line contact BL02 with low resistancecan be formed.

Other Embodiments

The semiconductor memory devices according to the first embodiment andthe second embodiment are described above. However, the semiconductormemory devices according to the embodiments are merely examples, and thespecific configuration, operation, and the like are adjustable asnecessary.

For example, in the first embodiment and the second embodiment, the bitline contacts BLC0, BLC1, BLC00, BLC02, and the like include a pluralityof contact electrodes. The word line contacts WLC0, WLC1, and the likeinclude a plurality of contact electrodes. Here, for example, the numberof contact electrodes included in the bit line contacts BLC0, BLC1,BLC00, BLC02, and the like are adjustable as necessary. For example, thecontact electrode V32′ in a bit line contact BLC02′ illustrated in FIG.25 is directly connected to an upper surface of the part D112 of thewiring D11 not via the contact electrode SV.

For example, FIG. 22 illustrates shapes of the wirings D11, D12.However, the wiring D11 only needs to electrically connect the two bitlines BL0 corresponding to the two memory cell arrays MCA mutuallyadjacent in the Y-direction to the bit lines BL2 corresponding to thetwo memory cell arrays MCA. The specific shape and the like areadjustable as necessary. The wiring D12 only needs to electricallyconnect the two bit lines BL0 corresponding to the two memory cellarrays MCA mutually adjacent in the Y-direction, and the specific shapeand the like are adjustable as necessary.

For example, in the example of FIG. 26, a wiring D11′ is disposedinstead of the wiring D11. The wiring D11′ is formed in an approximatelyrectangular shape extending in the Y-direction. End parts D111′ in theY-direction of the wiring D11′ are connected to lower ends of therespective contact electrodes V02 in the bit line contact BLC00 via thecontact electrodes SV. A part D112′ between the end parts D111′ isconnected to the lower end of the contact electrode V32′ in the bit linecontact BLC02 via the contact electrode SV.

[Others]

While certain embodiments have been described, these embodiments havebeen presented by way of example only, and are not intended to limit thescope of the inventions. Indeed, the novel methods and systems describedherein may be embodied in a variety of other forms: furthermore, variousomissions, substitutions and changes in the form of the methods andsystems described herein may be made without departing from the spiritof the inventions. The accompanying claims and their equivalents areintended to cover such forms or modifications as would fall within thescope and spirit of the inventions.

What is claimed is:
 1. A semiconductor memory device comprising: asubstrate; a first wiring disposed to be separated from the substrate ina first direction that intersects with a surface of the substrate, thefirst wiring extending in a second direction that intersects with thefirst direction; a second wiring disposed between the substrate and thefirst wiring; a third wiring disposed between the substrate and thesecond wiring, the third wiring extending in the second direction; afourth wiring disposed between the substrate and the third wiring; afifth wiring disposed between the substrate and the fourth wiring, thefifth wiring extending in the second direction; a first memory cellconnected to the first wiring and the second wiring; a second memorycell connected to the second wiring and the third wiring; a third memorycell connected to the third wiring and the fourth wiring; a fourthmemory cell connected to the fourth wiring and the fifth wiring; a firstcontact electrode disposed between the first wiring and the fifthwiring, the first contact electrode extending in the first direction andbeing electrically connected to the first wiring and the fifth wiring; asecond contact electrode disposed between the first contact electrodeand the fifth wiring, the second contact electrode extending in thefirst direction and being electrically connected to the first wiring andthe fifth wiring; and a third contact electrode disposed between thesecond contact electrode and the fifth wiring, the third contactelectrode extending in the first direction and being electricallyconnected to the first wiring and the fifth wiring, wherein the secondcontact electrode has a width in the second direction larger than awidth in the second direction of the first contact electrode and largerthan a width in the second direction of the third contact electrode. 2.The semiconductor memory device according to claim 1, wherein the widthin the second direction of the first contact electrode is larger than awidth in a third direction of the first contact electrode, and the thirddirection intersects with the first direction and the second direction.3. The semiconductor memory device according to claim 1, wherein thefirst contact electrode has a width in a third direction larger than awidth in the third direction of the first wiring, and the thirddirection intersects with the first direction and the second direction.4. The semiconductor memory device according to claim 3, wherein thefirst contact electrode has one end portion in the first directionconnected to the first wiring, and the one end portion in the firstdirection of the first contact electrode has a width in the thirddirection equal to or smaller than the width in the third direction ofthe first wiring.
 5. The semiconductor memory device according to claim1, further comprising: a sixth wiring adjacent to the first wiring in athird direction that intersects with the first direction and the seconddirection; and a seventh wiring adjacent to the first wiring in thethird direction, wherein the second contact electrode has a width in thethird direction larger than a distance between the sixth wiring and theseventh wiring in the third direction.
 6. The semiconductor memorydevice according to claim 1, wherein the second contact electrode has anend portion in the first direction on the substrate side farther fromthe substrate than the fourth memory cell, and the second contactelectrode has an end portion in the first direction on an opposite sideof the substrate closer to the substrate than the first memory cell. 7.The semiconductor memory device according to claim 1, furthercomprising: a sixth wiring adjacent to the first wiring in a thirddirection that intersects with the first direction and the seconddirection; a seventh wiring adjacent to the first wiring in the thirddirection; an eighth wiring adjacent to the fifth wiring in the thirddirection; a ninth wiring adjacent to the fifth wiring in the thirddirection; a fifth memory cell connected to the sixth wiring and thesecond wiring; a sixth memory cell connected to the seventh wiring andthe second wiring; a fourth contact electrode disposed between the sixthwiring and the eighth wiring, the fourth contact electrode extending inthe first direction and being electrically connected to the sixth wiringand the eighth wiring; and a fifth contact electrode disposed betweenthe seventh wiring and the ninth wiring, the fifth contact electrodeextending in the first direction and being electrically connected to theseventh wiring and the ninth wiring, wherein a distance between thefirst contact electrode and the second wiring in the second direction issmaller than a distance between the fourth contact electrode and thesecond wiring in the second direction, and the distance between thefourth contact electrode and the second wiring in the second directionis smaller than a distance between the fifth contact electrode and thesecond wiring in the second direction.
 8. A semiconductor memory devicecomprising: a substrate; a first wiring disposed to be separated fromthe substrate in a first direction that intersects with a surface of thesubstrate, the first wiring extending in a second direction thatintersects with the first direction; a second wiring disposed betweenthe substrate and the first wiring; a third wiring disposed between thesubstrate and the second wiring, the third wiring extending in thesecond direction; a fourth wiring disposed between the substrate and thethird wiring; a fifth wiring disposed between the substrate and thefourth wiring, the fifth wiring extending in the second direction; afirst memory cell connected to the first wiring and the second wiring; asecond memory cell connected to the second wiring and the third wiring;a third memory cell connected to the third wiring and the fourth wiring;a fourth memory cell connected to the fourth wiring and the fifthwiring; a sixth wiring disposed between the substrate and the fifthwiring; a first contact electrode disposed between the first wiring andthe sixth wiring, the first contact electrode extending in the firstdirection and being electrically connected to the first wiring and thesixth wiring; a second contact electrode disposed between the firstcontact electrode and the sixth wiring, the second contact electrodeextending in the first direction and being electrically connected to thefirst wiring and the sixth wiring; and a third contact electrodedisposed between the fifth wiring and the sixth wiring, the thirdcontact electrode extending in the first direction and beingelectrically connected to the fifth wiring and the sixth wiring, whereinthe second contact electrode has a width in the second direction largerthan a width in the second direction of the first contact electrode. 9.The semiconductor memory device according to claim 8, wherein the widthin the second direction of the first contact electrode is larger than awidth in a third direction of the first contact electrode, and the thirddirection intersects with the first direction and the second direction.10. The semiconductor memory device according to claim 8, wherein thefirst contact electrode has a width in a third direction larger than awidth in the third direction of the first wiring, and the thirddirection intersects with the first direction and the second direction.11. The semiconductor memory device according to claim 10, wherein thefirst contact electrode has one end portion in the first directionconnected to the first wiring, and the one end portion in the firstdirection of the first contact electrode has a width in the thirddirection equal to or smaller than the width in the third direction ofthe first wiring.
 12. The semiconductor memory device according to claim8, further comprising: a seventh wiring disposed to be separated fromthe fifth wiring in the second direction, the seventh wiring extendingin the second direction; and a fourth contact electrode disposed betweenthe seventh wiring and the sixth wiring, the fourth contact electrodeextending in the first direction and being electrically connected to theseventh wiring and the sixth wiring, wherein the second contactelectrode is disposed between the fifth wiring and the seventh wiring inthe second direction.
 13. The semiconductor memory device according toclaim 12, further comprising: an eighth wiring adjacent to the fifthwiring in a third direction that intersects with the first direction andthe second direction, the eighth wiring extending in the seconddirection; a ninth wiring adjacent to the seventh wiring in the thirddirection, the ninth wiring extending in the second direction, whereinthe second contact electrode is disposed between the eighth wiring andthe ninth wiring in the second direction.
 14. The semiconductor memorydevice according to claim 13, further comprising: a tenth wiringdisposed between the substrate and the eighth wiring; a fifth contactelectrode disposed between the eighth wiring and the tenth wiring, thefifth contact electrode extending in the first direction and beingelectrically connected to the eighth wiring and the tenth wiring; and asixth contact electrode disposed between the ninth wiring and the tenthwiring, the sixth contact electrode extending in the first direction andbeing electrically connected to the ninth wiring and the tenth wiring.15. The semiconductor memory device according to claim 14, wherein thesixth wiring includes: a first part that extends in the third directionand is connected to the second contact electrode; a second part thatextends in the third direction and is connected to the third contactelectrode; a third part that extends in the third direction and isconnected to the fourth contact electrode; and a fourth part thatextends in the second direction and is connected to the first part, thesecond part, and the third part.
 16. The semiconductor memory deviceaccording to claim 14, wherein the tenth wiring includes: a fifth partthat extends in the third direction and is connected to the fifthcontact electrode; a sixth part that extends in the third direction andis connected to the sixth contact electrode; and a seventh part thatextends in the second direction and is connected to the fifth part andthe sixth part.